As a result of the computer simulation, the drift curve of hFE with time and the effects of temperature, emitter bias voltage, and base surface potential on the curve are given. 经计算机模拟分析,求得了h(FE)随时间的漂移曲线以及温度、发射结偏压、基区表面势对这种漂移的影响。
The Calculation for Quiescent Point of Emitter Bias Circuit 射极偏置电路静态工作点的计算
The edge crowding effect of emitter current in a transistor caused by self bias of base resistor is one of the factors to limit its capability of loaded current. 由基区电阻的自偏压引起的晶体管发射极电流集边效应,是限制晶体管承载电流能力的因素之一〔1~4〕。